Tuesday, April 17, 2012

TriQuint Semiconductor, Inc. (TQNT) Signs Agreement with U.S. Army to Support Development of Gallium Nitride Devices

TriQuint Semiconductor, a leading RF solutions supplier and technology innovator, announced today that it has entered into a Cooperative Research and Development Agreement (CRADA) with the U.S. Army Research Laboratory to investigate and produce innovative new high-frequency and mixed signal integrated circuits based on TriQuint’s proprietary gallium nitride technology. The CRADA will expedite the advancement of new programs supporting communications, radar, electronic warfare, and similar applications.

This agreement gives researchers from the Army access to TriQuint’s extensive knowledge of development, fabrication, and packaging in this arena. This collaboration is expected to benefit both parties in their endeavor to accelerate the maturation of gallium nitride technology. TriQuint’s new E/D (enhancement-depletion mode) gallium nitride technology is expected to serve as the backbone for circuits created as a result of this initiative.

This new agreement will leverage the gallium nitride technology, which TriQuint has already created through on-going R&D programs. The revolutionary process has already been utilized in Defense Advanced Research Projects Agency initiatives, including the Nitride Electronic NeXt-Generation (NEXT) program that TriQuint now leads. Within the NEXT program, TriQuint continues to establish benchmark performance standards for mixed-signal (digital and RF) devices. TriQuint’s success with gallium nitride processes led to its selection as a prime contractor in the Microscale Power Conversion program. This program will be developing ultra-fast, high power DC-DC switch modulator technology for advanced integrated RF amplifiers. Compound Semiconductor recognized TriQuint’s contribution to this program on March 12 with a 2012 CS Industry Award.

“Creative partnerships through Cooperative Research and Development Agreements encourage outside businesses and university organizations to share in the discovery of and investment in technologies. In this case, ARL is leveraging industrial fabrication capabilities allowing ARL to maximize its return on investment,” said John Miller, Army Research Laboratory Director. “These advanced IC processes, coupled with ARL’s design expertise, could lead to innovations and advancements in both military and consumer applications in communications, radar and electronic warfare.”

“TriQuint’s gallium nitride research leads the industry. This new CRADA is another example of ways that our work in one program benefits other DoD agencies and service branches. We will provide access to our extensive development capabilities and the ARL will provide designs and test circuits in support of their advanced programs,” said James L. Klein, TriQuint Vice President and General Manager for Defense Products and Foundry Services.

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